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| HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features * * * * Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP-6 4 5 6 12 5 6 DD D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse) I DR Note 1 Note 2 Note 2 Note 3 Ratings -20 12 -4.4 -17.6 -4.4 2.0 1.05 150 -55 to +150 Unit V V A A A W W C C Pch (pulse) Pch (continuous) Channel temperature Storage temperature Note: Tch Tstg 1. PW 10 s, duty cycle 1% 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5 s, Ta = 25C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min -20 -- -- -0.4 -- -- |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 4 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 55 85 7 750 310 220 11 2 3.5 15 100 85 100 -0.95 50 Max -- 0.1 -1 -1.4 65 110 -- -- -- -- -- -- -- -- -- -- -- -1.23 -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns I F = -4.4 A, VGS = 0 I F = -4.4 A, VGS = 0 diF/ dt = -20 A/ s Test Conditions I D = -10 mA, VGS = 0 VGS = 12 V, VDS = 0 VDS = -20 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -3 A, VGS = -4.5 V Note 1 I D = -3 A, VGS = -2.5 V Note 1 I D = -3 A, VDS = -10 V Note 1 VDS = -10 V VGS = 0 f = 1 MHz VDD = -10 V VGS = -4.5 V I D = -4.4 A VGS = -4.5 V, ID = -3 A RL = 3.3 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total Gate charge Gate to Source charge Gate to Drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test I GSS I DSS VGS(off) RDS(on) 2 HAT1043M Main Characteristics Power vs. Temperature Derating 2.0 Pch (W) I D (A) -100 -30 -10 -3 -1 DC Op Maximum Safe Operation Area 10 s PW er 1.5 = 1 10 ms (1 m 100 s s ot) Channel Dissipation Drain Current 1.0 ati on sh 0.5 -0.3 Operation in 5 s) this area is No -0.1 limited by R te DS(on) 1 -0.03 Ta = 25C 1 shot pulse -0.01 -3 -0.1 -0.3 -1 -10 -30 -100 Drain to Source Voltage V DS (V) Note 1 When using the alumina ceramic board ( 50x50x0.7mm) (P W 0 50 100 150 200 Ambient Temperature Ta (C) Test Condition When using the alumina ceramic board (50x50x0.7mm),(PW 5s) Typical Output Characteristics Typical Transfer Characteristics -10 -10 V I D (A) -8 -4 V -3 V -2.5 V -6 -2 V (A) -8 Pulse Test -10 V DS = -10 V Pulse Test ID Drain Current -6 Drain Current -4 -4 -2 VGS = -1.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -2 75C Tc = -25C 25C 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 3 HAT1043M Drain to Source Saturation Voltage vs. Gate to Source Voltage -0.5 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 -0.4 Drain to Source On State Resistance R DS(on) (m ) -0.3 I D = -5 A -0.2 -2 A -1 A 0 -12 -4 -8 Gate to Source Voltage -16 -20 V GS (V) 200 100 50 20 10 -0.1 -0.2 VGS = -2.5 V -4.5 V -0.1 -0.5 -1 -2 -5 -10 -20 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (m ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.2 0.1 -0.1 -0.3 -1 -3 -10 Drain Current I D (A) -30 -50 75 C V DS = -10 V Pulse Test Tc = -25 C 25 C 150 I D = -5 A -2.5 V -1, -2 A 100 -5 A 50 VGS = -4.5 V 0 -50 -1, -2 A 0 50 100 150 200 Case Temperature Tc (C) 4 HAT1043M Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 3000 VGS = 0 f = 1 MHz 1000 Ciss 300 100 Coss Crss 200 100 50 Capacitance C (pF) 20 10 -0.1 di / dt = 20 A / s V GS = 0, Ta = 25 C -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) 30 10 0 -4 -8 -12 -16 -20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) Switching Time t (ns) -10 V DS V DD = - 5 V -10 V -20 V V GS (V) 0 0 1000 500 Switching Characteristics -2 tr 200 100 50 t d(on) 20 10 -0.1 -0.2 V GS = -4.5 V, V DD = -10 V PW = 5 s, duty < 1 % -0.5 -1 -2 -5 I D (A) -10 -20 t d(off) tf Collector to Emitter Voltage -20 -4 V GS -30 V DD = - 5 V -10 V -20 V I D = -4.4 A 4 8 12 16 Gate Charge Qg (nc) -6 -40 -8 -10 20 -50 0 Gate to Emitter Voltage Drain Current 5 HAT1043M Reverse Drain Current vs. Source to Drain Voltage -10 (A) -8 Reverse Drain Current I F -5 V -6 V GS = 0, 5 V -4 -2 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SDF (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin Switching Time Waveform 10% 90% Vin 10 V 50 V DD = 10 V Vout td(on) 90% 10% tr td(off) 90% 10% tf 6 HAT1043M Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 p ot uls e ch - f(t) = s (t) * ch - f ch - f = 119 C/W, Ta = 25 C When using the alumina ceramic board (50x50x0.7 mm) PDM PW T 0.001 1s h D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) 7 HAT1043M Package Dimensions Unit: mm 0.6 0.30.1 0.15 - 0.05 + 0.10 1.60.15 2.80.2 0 ~ 0.1 1.0 1.0 2.950.15 0.2 0.6 0.90.1 Hitachi Code EIAJ JEDEC TSOP-6 - 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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